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VNN7NV04, VNS7NV04 VND7NV04, VND7NV04-1
OMNIFET II fully autoprotected Power MOSFET
Features
Type VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1

RDS(on)
Ilim
Vclamp
2
60 m
6A
40 V
SOT-223
1
2
3
SO-8
Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive
3 1
1 3 2
TO252 (DPAK)
TO251 (IPAK)
Description
The VNN7NV04, VNS7NV04, VND7NV04 VND7NV04-1, are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin.
Table 1.
Package
Device summary
Order codes Tube Tube (lead-free) VND7NV04-E VND7NV04-1-E Tape and reel VNN7NV0413TR VNS7NV0413TR VND7NV0413TR Tape and reel (lead-free) VND7NV04TR-E -
SOT-223 SO-8 TO-252 TO-251
VNN7NV04 VNS7NV04 VND7NV04 VND7NV04-1
September 2010
Doc ID 7383 Rev 3
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www.st.com 1
Contents
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Contents
1 2 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.1 2.2 2.3 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1 3.2 3.3 3.4 Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 SO-8 maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . . . . 17 DPAK maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . . . 18 SOT-223 maximum demagnetization energy . . . . . . . . . . . . . . . . . . . . . . 19
4
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.1 4.2 4.3 SO-8 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 SOT-223 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 DPAK thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
5
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 TO-251 (IPAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 TO-252 (DPAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 SOT-223 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 SO-8 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 DPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 IPAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
6
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
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List of tables
List of tables
Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 SO-8 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 SOT-223 thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 DPAK thermal parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 TO-251 (IPAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 TO-252 (DPAK) mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 SOT-223 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 SO-8 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
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List of figures
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
List of figures
Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Figure 31. Figure 32. Figure 33. Figure 34. Figure 35. Figure 36. Figure 37. Figure 38. Figure 39. Figure 40. Figure 41. Figure 42. Figure 43. Figure 44. Figure 45. Figure 46. Figure 47. Figure 48. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Static drain-source on resistance vs input voltage (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . 13 Static drain-source on resistance vs input voltage (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . 13 Source-drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Static drain source on resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Turn-on current slope (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Turn-on current slope (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Static drain-source on resistance vs Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Input voltage vs input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Turn-off drain source voltage slope (part 1/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Turn-off drain source voltage slope (part 2/2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Normalized on resistance vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Switching time resistive load (part 1/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Switching time resistive load (part 2/2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Normalized input threshold voltage vs temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Normalized current limit vs junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 SO-8 maximum turn-off current versus load inductance. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 SO-8 demagnetization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 DPAK maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . 18 DPAK demagnetization. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 SOT-223 maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . 19 SOT-223 demagnetization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 SO-8 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 20 SO-8 thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Thermal fitting model of an OMNIFET II in SO-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 SOT-223 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 22 SOT-223 thermal impedance junction ambient single pulse. . . . . . . . . . . . . . . . . . . . . . . . 23 Thermal fitting model of an OMNIFET II in SOT-223 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 DPAK PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . . 24 DPAK thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Thermal fitting model of an OMNIFET II in DPAK. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 TO-251 (IPAK) package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Figure 49. Figure 50. Figure 51. Figure 52. Figure 53. Figure 54. Figure 55. Figure 56. Figure 57.
List of figures
TO-252 (DPAK) package dimensions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 SOT-223 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 SO-8 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 SOT-223 tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 SO-8 tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 DPAK footprint and tube shipment (no suffix). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 DPAK tape and reel shipment (suffix "TR") . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 IPAK tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
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Block diagram and pin description
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
1
Block diagram and pin description
Figure 1. Block diagram
DRAIN
2 Overvoltage Clamp
INPUT
1
Gate Control
Over Temperature
Linear Current Limiter
3
SOURCE
FC01000
Figure 2.
Configuration diagram (top view)
SO-8 Package(1)
SOURCE SOURCE SOURCE INPUT
1
8
DRAIN DRAIN DRAIN
4
5
DRAIN
1. For the pins configuration related to SOT-223, DPAK, IPAK see outlines at page 1.
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Electrical specifications
2
Electrical specifications
Figure 3. Current and voltage conventions
ID VDS
DRAIN IIN RIN INPUT SOURCE
VIN
2.1
Absolute maximum ratings
Table 2.
Symbol VDS VIN IIN RIN MIN ID IR VESD1 VESD2 Ptot EMAX
Absolute maximum ratings
Value Parameter SOT-223 Drain-source voltage (VIN=0 V) Input voltage Input current Minimum input series impedance Drain current Reverse DC output current Electrostatic discharge (R=1.5 K, C=100 pF) Electrostatic discharge on output pin only (R=330 , C=150 pF) Total dissipation at Tc=25 C Maximum switching energy (L=0.7 mH; RL=0 ; Vbat=13.5 V; Tjstart=150 C; IL=9 A) Maximum switching energy (L=0.6 mH; RL=0 ; Vbat=13.5 V; Tjstart=150 C; IL=9 A) Operating junction temperature Case operating temperature Storage temperature 7 40 SO-8 DPAK/IPAK V V mA A A V V 60 40 W mJ Internally clamped Internally clamped +/-20 150 Internally limited -10.5 4000 16500 4.6 Unit
EMAX Tj Tc Tstg
37 Internally limited Internally limited -55 to 150
mJ C C C
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Electrical specifications
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
2.2
Table 3.
Symbol Rthj-case Rthj-lead Rthj-amb
Thermal data
Thermal data
Value Parameter SOT-223 Thermal resistance junction-case max Thermal resistance junction-lead max Thermal resistance junction-ambient max 96
(1)
Unit SO-8 DPAK 2.1 27 90
(1)
IPAK 2.1 C/W C/W
18
65
(1)
102
C/W
1. When mounted on a standard single-sided FR4 board with 0.5 mm2 of Cu (at least 35 m thick) connected to all DRAIN pins.
2.3
Table 4.
Symbol Off VCLAMP VCLTH VINTH IISS VINCL IDSS On RDS(on)
Electrical characteristics
-40 C < Tj < 150 C, unless otherwise specified. Electrical characteristics
Parameter Test conditions Min Typ Max Unit
Drain-source clamp voltage Drain-source clamp threshold voltage Input threshold voltage
VIN=0 V; ID=3.5 A VIN=0 V; ID=2 mA VDS=VIN; ID=1 mA
40 36 0.5
45
55
V V
2.5 100 150 8 -0.3 30 75
V A V A
Supply current from input VDS=0 V; VIN=5 V pin Input-source clamp voltage Zero input voltage drain current (VIN=0 V) IIN=1 mA IIN=-1 mA VDS=13 V; VIN=0 V; Tj=25 C VDS=25 V; VIN=0 V 6 -1.0
6.8
Static drain-source on resistance
VIN=5 V; ID=3.5 A; Tj=25 C VIN=5 V; ID=3.5 A
60 120
m
Dynamic (Tj=25 C, unless otherwise specified) gfs (1) COSS Forward transconductance Output capacitance VDD=13 V; ID=3.5 A VDS=13 V; f=1 MHz; VIN=0 V 9 220 S pF
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Table 4.
Symbol
Electrical specifications
Electrical characteristics (continued)
Parameter Test conditions Min Typ Max Unit
Switching (Tj=25 C, unless otherwise specified) td(on) tr td(off) tf td(on) tr td(off) tf (dI/dt)on Qi Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time Turn-on current slope Total input charge VDD=15 V; ID=3.5 A Vgen=5 V; Rgen=RIN MIN=150 VDD=12 V; ID=3.5 A; VIN=5 V Igen=2.13 mA (see figure Figure 7.) VDD=15 V; ID=3.5 A Vgen=5 V; Rgen=2.2 K (see figure Figure 4.) VDD=15 V; ID=3.5 A Vgen=5 V; Rgen=RIN MIN=150 (see figure Figure 4.) 100 470 500 350 0.75 4.6 5.4 3.6 6.5 18 300 1500 1500 1000 2.3 14.0 16.0 11.0 ns ns ns ns s s s s A/s nC
Source drain diode (Tj=25 C, unless otherwise specified) VSD(1) trr Qrr IRRM Forward on voltage Reverse recovery time ISD=3.5 A; VIN=0 V 0.8 220 0.28 2.5 V ns C A
ISD=3.5 A; dI/dt=20 A/s Reverse recovery charge VDD=30 V; L=200 H Reverse recovery current (see test circuit, figure Figure 5.)
Protections (-40 C < Tj < 150 C, unless otherwise specified) Ilim tdlim Tjsh Tjrs Igf Eas Drain current limit Step response current limit Over temperature shutdown Over temperature reset Fault sink current Single pulse avalanche energy VIN=5 V; VDS=13 V; Tj=Tjsh starting Tj=25 C; VDD=24 V VIN=5 V Rgen=RIN MIN=150 ; L=24 mH (see figures Figure 6. & Figure 8.) 200 VIN=5 V; VDS=13 V VIN=5 V; VDS=13 V 150 135 15 6 9 4.0 175 200 12 A s C C mA mJ
1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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Protection features
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
3
Protection features
During normal operation, the input pin is electrically connected to the gate of the internal Power MOSFET through a low impedance path. The device then behaves like a standard Power MOSFET and can be used as a switch from DC up to 50 kHz. The only difference from the user's standpoint is that a small DC current IISS (typ. 100A) flows into the input pin in order to supply the internal circuitry. The device integrates:
Overvoltage clamp protection: internally set at 45 V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. Linear current limiter circuit: limits the drain current ID to Ilim whatever the input pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the over temperature threshold Tjsh. Over temperature and short circuit protection: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Over temperature cutout occurs in the range 150 to 190 C, a typical value being 170 C. The device is automatically restarted when the chip temperature falls of about 15 C below shutdown temperature. Status feedback: in the case of an over temperature fault condition (Tj > Tjsh), the device tries to sink a diagnostic current Igf through the input pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the input pin driver is not able to supply the current Igf, the input pin will fall to 0 V. This will not however affect the device operation: no requirement is put on the current capability of the input pin driver except to be able to supply the normal operation drive current IISS.
Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL logic circuit.
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Figure 4. Switching time test circuit for resistive load
Protection features
ID 90%
tr td(on)
10% td(off)
tf t
Vgen
t
Figure 5.
Test circuit for diode recovery times
A D I
FAST DIODE
A L=100uH B D
OMNIFET
S B
150 Rgen
I
VDD
OMNIFET
S
Vgen
8.5
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Protection features
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Figure 6.
Unclamped inductive load test circuits
Figure 7.
Input charge test circuit
VIN
RGEN VIN PW
Figure 8.
Unclamped inductive waveforms
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Protection features
3.1
Figure 9.
Electrical characteristics curves
Derating curve Figure 10. Transconductance
Gfs (S)
20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8
Vds=13V
Tj=-40C Tj=25C Tj=150C
Id(A)
Figure 11.
Static drain-source on resistance vs input voltage (part 1/2)
Figure 12. Static drain-source on resistance vs input voltage (part 2/2)
Rds(on) (mOhm)
140 120 100 80 60
Tj=25C Tj=-40C Id=6A Id=1A Id=6A Id=1A Id=6A Id=1A
Rds(on) (mOhm)
120 110 100 90 80 70 60 50 40 30 20 10 0 3 3.5 4 4.5 5 5.5 6 6.5 7
Tj=25C
Id=3.5A
Tj=150C
Tj=150C
40
Tj= - 40C
20 0 3 3.5 4 4.5 5 5.5 6
6.5
Vin(V)
Vin(V)
Figure 13. Source-drain diode forward characteristics
Vsd (mV)
1000 950 900 850 800 750 700 650 600 550 500 0 2 4 6 8 10 12 14
Figure 14. Static drain source on resistance
Rds(on) (mohms)
150
Vin=0V
125
Vin=5V
100
Tj=150C
75
50
Tj=25C Tj=-40C
25
0 0 1 2 3 4 5 6
Id(A)
Id(A)
Doc ID 7383 Rev 3
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Protection features
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Figure 15. Turn-on current slope (part 1/2)
di/dt(A/us)
2.25 2 1.75 1.5 1.25 1 0.75 0.5 0.25 100 200 300 400 500 600 700 800 900 1000 1100
Figure 16. Turn-on current slope (part 2/2)
di/dt(A/us)
8 7
Vin=3.5V Vdd=15V Id=3.5A
6 5 4 3 2 1 0 100 200 300 400 500 600
Vin=5V Vdd=15V Id=3.5A
700
800
900 1000 1100
Rg(ohm)
Rg(ohm)
Figure 17. Transfer characteristics
Figure 18. Static drain-source on resistance vs Id
Rds(on) (mOhm)
140
Idon(A)
10 9 8 7 6 5 4 3 2
Tj=25C Tj=-40C Tj=150C
Vds=13.5V
120
Vin=3.5V
100 80 60
Tj=150C Vin=5V
Vin=3.5V Tj=25C Vin=5V Vin=3.5V Vin=5V
40
Tj=-40C
20 1 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
5
5.5
6
Vin(V)
Id(A)
Figure 19. Input voltage vs input charge
Vin(V)
8 7 6 5
Figure 20. Turn-off drain source voltage slope (part 1/2)
dv/dt(V/us)
300
Vds=12V Id=3.5A
250
200
Vin=5V Vdd=15V Id=3.5A
150 4 3 2 1 0 0 0 5 10 15 20 25 100 200 300 400 500 600 700 800 900 1000 1100 100
50
Qg(nC)
Rg(ohm)
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Protection features
Figure 21. Turn-off drain source voltage slope Figure 22. Capacitance variations (part 2/2)
dv/dt(v/us)
300
C(pF)
600
250
500
200
Vin=3.5V Vdd=15V Id=3.5A
f=1MHz Vin=0V
400
150 300 100
50
200
0 100 200 300 400 500 600 700 800 900 1000 1100
100 0 5 10 15 20 25 30 35
Rg(ohm)
Vds(V)
Figure 23. Output characteristics
Figure 24. Normalized on resistance vs temperature
v
ID(A)
12 11 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13
Vin=2.5V Vin=3V Vin=5V Vin=4.5V Vin=4V
Rds(on)
2.25 2 1.75 1.5 1.25 1 0.75
Vin=2V
Vin=5V Id=3.5A
0.5 -50 -25 0 25 50 75 100 125 150 175
VDS(V)
T(C)
Figure 25. Switching time resistive load (part 1/2)
t(us)
5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 250 500 750 1000 1250 1500 1750 2000 2250 2500
Figure 26. Switching time resistive load (part 2/2)
t(ns)
1600
tr Vdd=15V Id=3.5A Rg=150ohm
Vdd=15V Id=3.5A Vin=5V
tr td(off)
1400 1200
tf
1000 800 600
td(off)
400
td(on)
200
tf
td(on)
0 3.25 3.5 3.75 4 4.25 4.5 4.75 5 5.25
Rg(ohm)
Vin(V)
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Protection features
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Figure 27. Normalized input threshold voltage Figure 28. Normalized current limit vs junction vs temperature temperature
Vin(th)
1.15 1.1 1.05 1 0.95 10 0.9 9 0.85 0.8 0.75 0.7 -50 -25 0 25 50 75 100 125 150 175 8 7 6 5 -50 -25 0 25 50 75 100 125 150 175
Ilim (A)
15 14
Vds=Vin Id=1mA
13 12 11
Vds=13V Vin=5V
T(C)
Tj (C)
Figure 29. Step response current limit
Tdlim(us)
7 6.5 6 5.5 5 4.5 4 3.5 5 10 15 20 25 30 35
Vin=5V Rg=150ohm
Vdd(V)
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Protection features
3.2
SO-8 maximum demagnetization energy
Figure 30. SO-8 maximum turn-off current versus load inductance
ILMAX (A) 100
10
A B C
1 0.1
Legend A = Single Pulse at TJstart=150 C B = Repetitive pulse at TJstart=100 C C = Repetitive Pulse at TJstart=125 C
1 L(mH)
10
100
Conditions: VCC=13.5 V Values are generated with RL=0 . In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. Figure 31. SO-8 demagnetization
VIN, IL Demagnetization Demagnetization Demagnetization
t
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Protection features
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
3.3
DPAK maximum demagnetization energy
Figure 32. DPAK maximum turn-off current versus load inductance ILMAX (A)
100
10
1 0.01
Legend A = Single Pulse at TJstart=150 C B = Repetitive pulse at TJstart=100 C C = Repetitive Pulse at TJstart=125 C
0.1
1 L (m H )
10
100
Conditions: VCC=13.5 V Values are generated with RL=0 . In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C.
Figure 33. DPAK demagnetization
VIN, IL Demagnetization Demagnetization Demagnetization
t
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Protection features
3.4
SOT-223 maximum demagnetization energy
Figure 34. SOT-223 maximum turn-off current versus load inductance
ILMAX (A) 100
10
1 0.01
Legend A = Single Pulse at TJstart=150 C B = Repetitive pulse at TJstart=100 C C = Repetitive Pulse at TJstart=125 C
0.1 L(mH)
1
10
Conditions: VCC=13.5 V Values are generated with RL=0 . In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. Figure 35. SOT-223 demagnetization
VIN, IL Demagnetization Demagnetization Demagnetization
t
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Package and PCB thermal data
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
4
4.1
Package and PCB thermal data
SO-8 thermal data
Figure 36. SO-8 PC board
Note:
Layout condition of Rth and Zth measurements (PCB FR4 area=58 mm x 58 mm, PCB thickness=2 mm, Cu thickness=35 m, Copper areas: 0.14 cm2, 0.8 cm2, 2 cm2). Figure 37. Rthj-amb vs PCB copper area in open box free air condition
RTHj_amb (C/W)
SO-8 at 2 pins connected to TAB
110 105 100 95 90 85 80 75 70 0 0.5 1 1.5 2 2.5
PCB Cu heatsink area (cm^2)
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Package and PCB thermal data
Figure 38. SO-8 thermal impedance junction ambient single pulse
ZT H (C /W) 1000
100
10
1
0.1 0.0001 0.001 0.01 0.1 1 T ime (s) 10 100 1000
Figure 39. Thermal fitting model of an OMNIFET II in SO-8
Tj
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Pd
T_amb
Equation 1 Pulse calculation formula Z TH = R TH + Z THtp ( 1 - ) where = t p T Table 5. SO-8 thermal parameter
Area/island (cm2) R1 (C/W) R2 (C/W) R3 (C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) Footprint 0.2 0.9 3.5 21 16 58 3.00E-04 28 2
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Package and PCB thermal data Table 5.
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
SO-8 thermal parameter (continued)
Area/island (cm2) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C) Footprint 9.00E-04 7.50E-03 0.045 0.35 1.05 2 2
4.2
SOT-223 thermal data
Figure 40. SOT-223 PC board
Note:
Layout condition of Rth and Zth measurements (PCB FR4 area=58 mm x 58 mm, PCB thickness=2 mm, Cu thickness=35 m, Copper areas: 0.11 cm2, 1 cm2, 2 cm2). Figure 41. Rthj-amb vs PCB copper area in open box free air condition
RTH j-amb (C/W)
140 130 120 110 100 90 80 70 60 0 0.5 1 1.5 2 2.5
Cu area (cm^2)
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Package and PCB thermal data
Figure 42. SOT-223 thermal impedance junction ambient single pulse
ZT H (C/W) 1000
100
10
1
0.1 0.0001 0.001 0.01 0.1 1 T ime (s) 10 100 1000
Figure 43. Thermal fitting model of an OMNIFET II in SOT-223
Tj
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Pd
T_amb
Equation 2 Pulse calculation formula Z TH = R TH + Z THtp ( 1 - ) where = t p T Table 6. SOT-223 thermal parameter
Area/island (cm2) R1 (C/W) R2 (C/W) R3 (C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) Footprint 0.2 1.1 4.5 24 0.1 100 3.00E-04 45 2
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Package and PCB thermal data Table 6.
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
SOT-223 thermal parameter (continued)
Area/island (cm2) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C) Footprint 9.00E-04 3.00E-02 0.16 1000 0.5 2 2
4.3
DPAK thermal data
Figure 44. DPAK PC board
Note:
Layout condition of Rth and Zth measurements (PCB FR4 area=60 mm x 60 mm, PCB thickness=2 mm, Cu thickness=35m, Copper areas: from minimum pad lay-out to 8 cm2). Figure 45. Rthj-amb vs PCB copper area in open box free air condition
RTH j_amb (C/W)
90 80 70 60 50 40 30 0 2 4 6 8 10
PCB CU heatsink area (cm^2)
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Package and PCB thermal data
Figure 46. DPAK thermal impedance junction ambient single pulse
ZT H (C/W) 1000
100
10
1
0.1 0.0001 0.001 0.01 0.1 1 T ime (s) 10 100 1000
Figure 47. Thermal fitting model of an OMNIFET II in DPAK
Tj
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Pd
T_amb
Equation 3 Pulse calculation formula Z TH = R TH + Z THtp ( 1 - ) where = t p T Table 7. DPAK thermal parameter
Area/island (cm2) R1 (C/W) R2 (C/W) R3 (C/W) R4 (C/W) R5 (C/W) R6 (C/W) Footprint 0.1 0.35 1.20 2 15 61 24 6
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Package and PCB thermal data Table 7.
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
DPAK thermal parameter (continued)
Area/island (cm2) C1 (W.s/C) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C) Footprint 0.0006 0.0021 0.05 0.3 0.45 0.8 5 6
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Package and packing information
5
Package and packing information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark.
5.1
TO-251 (IPAK) mechanical data
Table 8. TO-251 (IPAK) mechanical data
millimeters Symbol Min. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 2.2 0.9 0.7 0.64 5.2 Typ. Max. 2.4 1.1 1.3 0.9 5.4 0.85
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Package and packing information
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
Figure 48. TO-251 (IPAK) package dimensions
5.2
TO-252 (DPAK) mechanical data
Table 9. TO-252 (DPAK) mechanical data
millimeters Symbol Min. A A1 A2 B B2 C C2 D D1 E E1 e G H 4.40 9.35 6.40 4.7 2.28 4.60 10.10 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.1 6.60 Typ. Max. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Table 9.
Package and packing information
TO-252 (DPAK) mechanical data (continued)
millimeters
Symbol Min. L2 L4 R V2 Package Weight 0 0.60 0.2 8 Gr. 0.29 Typ. 0.8 1.00 Max.
Figure 49. TO-252 (DPAK) package dimensions
P032P
5.3
SOT-223 mechanical data
Table 10. SOT-223 mechanical data
millimeters Symbol Min. A B B1 c D e 0.6 2.9 0.24 6.3 0.7 3 0.26 6.5 2.3 Typ. Max. 1.8 0.85 3.15 0.35 6.7
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Package and packing information Table 10.
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
SOT-223 mechanical data (continued)
millimeters
Symbol Min. e1 E H V A1 0.02 3.3 6.7 Typ. 4.6 3.5 7 10 (max) 0.1 3.7 7.3 Max.
Figure 50. SOT-223 package dimensions
0046067
5.4
SO-8 mechanical data
Table 11. SO-8 mechanical data
millimeters Symbol Min A a1 a2 a3 b A A1 0.10 0.65 0.35 0.1 Typ Max 1.75 0.25 1.65 0.85 0.48 1.75 0.25
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1 Table 11. SO-8 mechanical data (continued)
Package and packing information
millimeters Symbol Min A2 b c D
(1)
Typ
Max
1.25 0.28 0.17 4.80 5.80 3.80 4.90 6.00 3.90 1.27 0.25 0.40 1.04 0 8 0.10 0.50 1.27 0.48 0.23 5.00 6.20 4.00
E E1(2) e h L L1 k ccc
1. Dimension "D" does not include mold flash, protrusions or gate burrs. Mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both side). 2. Dimension "E1" does not include interlead flash or protrusions. Interlead flash or protrusions shall not exceed 0.25 mm per side.
Figure 51. SO-8 package dimensions
0016023 D
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Package and packing information
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
5.5
SOT-223 packing information
Figure 52. SOT-223 tape and reel shipment (suffix "TR")
REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 1000 1000 330 1.5 13 20.2 12.4 60 18.4
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2
All dimensions are in mm.
End
Start Top cover tape No components 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min Components No components
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Package and packing information
5.6
SO-8 packing information
Figure 53. SO-8 tube shipment (no suffix)
B C
A
Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
100 2000 532 3.2 6 0.6
Figure 54. SO-8 tape and reel shipment (suffix "TR")
REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 12.4 60 18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 12 4 8 1.5 1.5 5.5 4.5 2
End
All dimensions are in mm.
Start Top cover tape No components 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min Components No components
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Package and packing information
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
5.7
DPAK packing information
Figure 55. DPAK footprint and tube shipment (no suffix)
A
6 .7
1 .8
3 .0
1 .6
C
2 .3 6 .7 2 .3
B
Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
75 3000 532 6 21.3 0.6
Figure 56. DPAK tape and reel shipment (suffix "TR")
REEL DIMENSIONS
Base Q.ty Bulk Q.ty A (max) B (min) C ( 0.2) F G (+ 2 / -0) N (min) T (max) 2500 2500 330 1.5 13 20.2 16.4 60 22.4
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 8 1.5 1.5 7.5 6.5 2
All dimensions are in mm.
End
Start Top cover tape No components 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min Components No components
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Package and packing information
5.8
IPAK packing information
Figure 57. IPAK tube shipment (no suffix)
A C
B
Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
75 3000 532 6 21.3 0.6
All dimensions are in mm.
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Revision history
VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
6
Revision history
Table 12.
Date 01-Feb-2003
Document revision history
Revision 1 Initial Release Added Table 1: Device summary on page 1 and Section 4: Package and PCB thermal data on page 20. Updated Section 5: Package and packing information on page 27. Updated Table 4: Electrical characteristics Changes
28-Apr-2009
2
10-Sep-2010
3
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